Features
Contact factory for part availability
Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
Organization
–Page size x8: 4320 bytes (4096 + 224 bytes)
–Block size: 256 pages (1024K + 56K bytes)
–Plane size: 2 planes x 1024 blocks per plane
–Device size: 16Gb: 2048 blocks
Synchronous I/O performance
–Up to synchronous timing mode 5
–Clock rate: 10ns (DDR)
–Read/write throughput per pin: 200MT/s
Asynchronous I/O performance
–Up to asynchronous timing mode 5
–tRC/tWC: 20ns (MIN)
Array performance
–Read page: 75μs (MAX)
–Program page: 1300μs (TYP)
–Erase block: 3ms (TYP)
Operating Voltage Range
–VCC: 2.7–3.6V
–VCCQ: 1.7-1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
–Program cache
–Read cache sequential
–Read cache random
–One-time programmable (OTP) mode
–Multi-plane commands
–Multi-LUN operations
–Read unique ID
–Copyback
First block (block address 00h) is valid when ship-ped from factory2
RESET (FFh) required as first command after power-on
Operation status byte provides software method fordetecting:
–Operation completion
–Pass/fail condition
–Write-protect status
Data strobe (DQS) signals provide a hardware meth-od for synchronizing data DQ in the synchronousinterface
Copyback operations supported within the planefrom which data is read
Operating temperature:
–Commercial: 0oC to +70oC
Die Outline
Die size (stepping distance): 6.43380mm x8.83905mm
Bond pad location and identification, see Bond PadLocations and Identification (page 5)
General Physical Specifications
Nominal wafer thickness: 790μm ±25μm
Typical bond-pad metal thickness: 17.7k
Typical topside passivation: 4k oxynitride over10.5k of silane oxide
Metallization composition: 3k Pd over 10k Niover 3k Cu
Options
Interface:
- Asynchronous
- Synchronous
Marking
MT29F16G08CBACA
MT29F16G08CBECB
Form:Wafer 3W
Testing:Standard probe C1